bb804 document number 85554 rev. 1.6, 09-dec-05 vishay semiconductors www.vishay.com 1 18108 12 3 dual varicap diode features ? silicon epitaxial planar diode ? common cathode ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications tuning of separate resonant circuits, push-pull circuits in fm range, especially for car radios mechanical data case: sot-23 plastic case weight: approx. 8.1 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table 1) any selection part and any marking out of the below listed fm0 to fm4 is possible. absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part type differentiation ordering code marking remarks bb804-0 v rrm = 20 v, c d 42-43, 5 pf bb804-0-gs18 or bb804-0-gs08 fm0 tape and reel bb804-1 v rrm = 20 v, c d 43-44, 5 pf bb804-1-gs18 or bb804-1-gs08 fm1 tape and reel bb804-2 v rrm = 20 v, c d 44-45, 5 pf bb804-2-gs18 or bb804-2-gs08 fm2 tape and reel bb804-3 v rrm = 20 v, c d 45-46, 5 pf BB804-3-GS18 or bb804-3-gs08 fm3 tape and reel bb804-4 v rrm = 20 v, c d 46-47, 5 pf bb804-4-gs18 or bb804-4-gs08 fm4 tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 20 v reverse voltage v r 18 v forward current i f 50 ma parameter test condition symbol value unit junction temperature t j 125 c storage temperature range t stg - 65 to + 125 c e3
www.vishay.com 2 document number 85554 rev. 1.6, 09-dec-05 bb804 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified 1) a packing unit (reel) contains diodes from one capacitance group only. deliver y of single capacitance groups available only on request. package dimensions in mm (inches) parameter test condition part symbol min ty p. max unit reverse current v r = 16 v i r 20 na v r = 16 v, t j = 60 c i r 0.2 a diode capacitance 1) v r = 2 v, f = 1 mhz c d 42 47.5 pf diode capacitance v r = 2 v, f = 1 mhz group 0 c d 42 43.5 pf group 1 c d 43 44.5 pf group 2 c d 44 45.5 pf group 3 c d 45 46.5 pf group 4 c d 46 47.5 pf capacitance ratio v r = 2 v, 8 v, f = 100 mhz c d2 / c d8 1.65 1.75 series resistance c d = 38 pf, f = 100 mhz r s 0.3 0.4 figure of merit c d = 38 pf, f = 100 mhz q 100 140 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
bb804 document number 85554 rev. 1.6, 09-dec-05 vishay semiconductors www.vishay.com 3 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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